Abstract: Based on the strict quality requirements in the electronic industry, a method for determination of metal impurities in hydrogen fluoride gas was developed by inductively coupled plasma atomic emission spectrometry (ICP-AES) with a hydrofluoric acid-resistant sampling system. A simple self-made absorption device was designed for absorbing hydrogen fluoride gas, and the mass of absorbed hydrogen fluoride was obtained by the mass changes of absorption solution. The 16 metal elements including potassium, magnesium, aluminum, barium, zinc, chromium, cobalt, cadmium, iron, copper, nickel, lead, manganese, sodium, calcium and tin were determined under the optimal instrumental conditions. As found by results that linear relationships between mass concentrations of 16 metal elements and their corresponding spectral intensities were all in the definite ranges, with correlation coefficients greater than 0.999 0. The detection limits (3s) were ranged from 0.10-6.0 μg·L^-1, and RSDs (n=11) of the measured values were in the range of 0.96%-5.0%.