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    电感耦合等离子体原子发射光谱法测定铸铝合金中硅含量

    ICP-AES Determination of Silicon in Cast Aluminum Alloy

    • 摘要: 提出了电感耦合等离子体原子发射光谱测定铸铝合金中的高含量硅.采用正交试验方法研究了消解过程中氢氟酸用量、饱和硼酸用量、加热时间及饱和时间4因素对消解结果的影响.确定取样量为0.050 0 g,选择251.612(133) nm的谱线作为硅的分析线.在优化试验条件下,分析了两种铸铝合金已知样品(ZL 108,ZL 111A)中硅的含量,测定值与已知值相符.

       

      Abstract: ICP-AES was applied to the determination of silicon in cast aluminum alloys.Influential factors of the digestion process,including the amount of HF and H3BO3 saturated solution used,heating time,and saturated time were studied by orthogonal testing.Amount of sample taken was 0.050 0 g,and wavelength of 251.612(133) nm was selected as analytical lines for the determination.Under the optimum conditions,the proposed method was used in the analysis of two cast aluminum alloy (ZL 108,ZL 111A),the results obtained were in consistency with the known values.

       

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