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    胺菊酯分子印迹电化学传感器的制备及性能

    Preparation and Performance of Molecularly Imprinted Electrochemical Sensor of Tetramethrin

    • 摘要: 以邻氨基酚(OAP)为单体,胺菊酯为印迹分子,采用循环伏安法在玻碳电极上电化学聚合制备了胺菊酯分子印迹敏感膜。采用场发射扫描电镜(FESEM)和电化学方法对该印迹传感器进行了表征。结果表明:分子印迹传感器敏感膜洗脱前和洗脱后在形貌结构和电化学特性方面有明显的不同。以铁氰化钾为电化学探针,利用差分脉冲法(DPV)研究了传感器的响应性能,胺菊酯浓度在10.0~100 nmol·L-1范围内,传感器峰电流变化(Δi)与胺菊酯浓度c呈线性关系,检出限(3σ)为5.8 nmol·L-1。该传感器的响应时间为10 min,测定相对标准偏差(n=7)为2.76%,回收率在96.0%~103.0%之间。

       

      Abstract: A sensitive film of tetramethrin was imprinted molecularly on glassy carbon electrode by cyclic voltammetric electropolymerization using o-aminophenol as the monomer and tetramethrin as imprinting molecules. The imprinted electrochemical sensor obtained was characterized by methods of field emission scanning electron microscope and electrochemistry, e.g., cyclic voltammetry, differential pulse voltammetry (DPV) and etc. It was shown by the experimental results, significant differences in morphological structure and electrochemical characteristic were observed before and after the removal of the imprinted molecules. The response property of the sensor was studied by DPV, using K3[Fe(CN)6] as electrochemical probe. Linear relationship between values of change in peak current (Δi) of the sensor and concentration of tetramethrin was obtained in the range of 10.0-100 nmol·L-1, with its detection limit (3σ) of 5.8 nmol·L-1. Time of response of the sensor was found within 10 min. Value of RSD (n=7) found was 2.76%. Recovery of tetramethrin was tested by standard addition method, giving results in the range of 96.0%-103.0%.

       

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