高纯硅中痕量元素分析方法研究进展

Progress of Researches of Methods for Determination of Trace Elements in High-Purity Silicon

摘要: 综述了从1980-2012年间测定高纯硅中痕量元素分析方法的研究进展。高纯硅中痕量元素的主要分析方法包括红外光谱法、原子发射光谱法、原子吸收光谱法、X射线荧光光谱法、极谱法、离子探针与离子色谱法、二次离子质谱法、辉光放电质谱法、电感耦合等离子体质谱法等;并对高纯硅中痕量元素的分析方法进行了展望(引用文献59篇)。

Abstract: A review of the methods of determination of trace elements in high-purity silicon, including IRS, AES, AAS, XRF, polarography, ion probe analysis, IC, SIMS, GDMS and ICP-MS, reported mainly in the years from 1980 to 2012, was presented in this paper. Trends of study and development in this field were also outlined (59 ref. cited).