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    XU Jianping, ZHANG Zhaoxiong. XRFS Determination of Total Silicon, Silicon Dioxide and Others Impurity Elements in Industry Silicon with Sample Preparation by Fusion[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2019, 55(2): 187-192. DOI: 10.11973/lhjy-hx201902011
    Citation: XU Jianping, ZHANG Zhaoxiong. XRFS Determination of Total Silicon, Silicon Dioxide and Others Impurity Elements in Industry Silicon with Sample Preparation by Fusion[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2019, 55(2): 187-192. DOI: 10.11973/lhjy-hx201902011

    XRFS Determination of Total Silicon, Silicon Dioxide and Others Impurity Elements in Industry Silicon with Sample Preparation by Fusion

    • The method of sample preparation by fusion in a Li2B4O7-lined crucible was applied to the XRFS analysis of industrial silicon for determination of total silicon, silicon dioxide and others impurity elements (Al, Fe, Ca, Mg and Ti). Before the fusion procedure, the sample (1.000 0 g) should be ignited directly at 700℃ to 750℃ to give the value of ignition loss and to expell carbon in the sample. 0.200 0 g of the ignited sample was mixed thoroughly with 1.700 g of Li2CO3 and 0.1-0.3 mL of 600 g·L-1 NH4NO3 solution, and the mixture was transferred into the Li2B4O7-lined crucible and preoxidized for 10 to 12 min at 710℃ to 720℃. The preoxidized mixture together with the lined crucible was then transferred into a Pt-Au crucible in which 3.000 g of boric acid had been added preliminarily, and 0.1-0.4 mL of 400 g·L-1 NH4Br solution was added and the fusion procedure was carried out in a sample fusion apparatus, for 8 min under stationary mode and followed for 12 min under shaking mode. After cooling, a glassy slice of the melt of the sample was demoulded from the crucible. Five melts of calibration samples (equivalent to 0.200 0 g of each sample) were prepared by mixing oxides of determined elements, and treated in the same way as the fusion of sample. Linear relationships between values of XRF intensity and mass fraction of each components were kept in definite ranges. A formula for calculation of SiO2 in the sample was proposed. The proposed method was applied to analyze 5 samples of industrial silicon, giving results in consistency with the values given by wet analysis.
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