Advanced Search
    LI Fen, YE Jian-ping, ZHOU Xi-lin. ICP-AES Determination of Trace Amount of Boron in High Temperature Alloy[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2013, 49(8): 976-978.
    Citation: LI Fen, YE Jian-ping, ZHOU Xi-lin. ICP-AES Determination of Trace Amount of Boron in High Temperature Alloy[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2013, 49(8): 976-978.

    ICP-AES Determination of Trace Amount of Boron in High Temperature Alloy

    • A method for the determination of boron in high temperature alloy by ICP-AES was proposed in this paper. 0.500 0 g of sample was dissolved with 20 mL of a mixed acid of HCl and HNO3 (5+1) and 1 mL of HF. The spectral line of 249.678 nm was selected as analytical line for the determination. Linear relationship between values of emission intensity and mass concentration of boron was kept in the range within 4.00 mg·L-1. Value of detection limit (3S/N) of the method found was 2.1 μg·L-1. The proposed method was used in the analysis of 5 standard or known samples of high temperature alloy, giving results in consistency with their certified values or known value. Values of RSD′s (n=6) found were in the ranges of 0.46%-4.6%.
    • loading

    Catalog

      Turn off MathJax
      Article Contents

      /

      DownLoad:  Full-Size Img  PowerPoint
      Return
      Return