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    YANG Guang, LI Xia-zhang, ZHOU Yong-sheng, YANG Yang. Determination of Silicon in Cutting Slurry of Crystalline Silicon by PXRD[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2013, 49(12): 1441-1443.
    Citation: YANG Guang, LI Xia-zhang, ZHOU Yong-sheng, YANG Yang. Determination of Silicon in Cutting Slurry of Crystalline Silicon by PXRD[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2013, 49(12): 1441-1443.

    Determination of Silicon in Cutting Slurry of Crystalline Silicon by PXRD

    • Silicon in cutting slurry of crystalline silicon was determined by powder X-ray diffraction. Standard working curve was prepared by using mixtures of standard sample of pure silicon and silicon carbide, and the content of silicon was calculated based on the ratio of Ai/As, in which values of Ai and As represent separately the integrals of peak areas of silicon phase of the sample and the silicon standard sample found at the strongest diffraction peak of 2θ at 28.42°. It was found that: two linear regression equations were obtained as follow, y=0.012 7 x+0.003 7 (for wC in range of 0.2%-5%,) with r=0.999 8 and y=0.009 9 x+0.022 (for wC in range of 5%-99.5%,) with r=0.999 8. Precision was tested by analyzing a known sample (wSi%=10.06%) by the present method for 6 determinations, giving value of RSD 3.5%. A sample of waste silicon carbide powder was analyzed both by the present method and the method given by GB standard, values of Si-content found were 6.20% and 6.45% respectively, giving relative deviation of 2.9%.
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