LIU Jie, QIAN Rong, ZHUO Shang-jun, HE Pin-gang. Progress of Researches of Methods for Determination of Trace Elements in High-Purity Silicon[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2013, 49(1): 121-127.
Citation:
LIU Jie, QIAN Rong, ZHUO Shang-jun, HE Pin-gang. Progress of Researches of Methods for Determination of Trace Elements in High-Purity Silicon[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2013, 49(1): 121-127.
LIU Jie, QIAN Rong, ZHUO Shang-jun, HE Pin-gang. Progress of Researches of Methods for Determination of Trace Elements in High-Purity Silicon[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2013, 49(1): 121-127.
Citation:
LIU Jie, QIAN Rong, ZHUO Shang-jun, HE Pin-gang. Progress of Researches of Methods for Determination of Trace Elements in High-Purity Silicon[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART B:CHEMICAL ANALYSIS, 2013, 49(1): 121-127.
Progress of Researches of Methods for Determination of Trace Elements in High-Purity Silicon
A review of the methods of determination of trace elements in high-purity silicon, including IRS, AES, AAS, XRF, polarography, ion probe analysis, IC, SIMS, GDMS and ICP-MS, reported mainly in the years from 1980 to 2012, was presented in this paper. Trends of study and development in this field were also outlined (59 ref. cited).