Study on the Variation of Contents of Components of Silicon Carbide Ceramics After Oxidation in Use at High Temperatures by Compton Scattering

Monitoring of oxidation situation of silicon carbide ceramics in use at high temperatures was realized by measuring the change of compton scattering intensity of the scatterer (i.e., the sample) against rhodium (RhKα-C), with a wavelength dispersion X-ray fluorescence spectrometer. A mathematical model relating the compton scattering intensity with the average atomic number of the samples was established by using a set of 8 SiC calibration samples, and the variation of contents of components of SiC after oxidation at high temperature was calculated with this model. It was shown that the results of C, Si and O found by this method were in consistency with the results found by XPS, giving values of relative deviation less than 1%. It was concluded that data obtained by the proposed method were acceptable.